Current-driven crystallization promotion for multilevel storage in phase-change memory
نویسندگان
چکیده
In this study, we report current-driven crystallization promotion for multilevel storage in both lateral and vertical phase-change memories (PCMs). For the lateral device, the active medium consists of a top 50-nm TiN/150-nm SbTeN. It was demonstrated that the number of distinguishable resistance levels can readily reach 16 and even higher. For the vertical device, TiSi3/Ge2Sb2Te5/TiN structure was adopted and 8 distinct resistance levels were demonstrated. These resistance levels in this study result from the initial threshold switching and the subsequent current-driven crystallization promotion induced by Joule heating.
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